1. M.W. Chase, Jr., C.A. Davies, J.R. Downey, Jr., D.J. Frurip, R.A. McDonald, and A.N. Syverud, JANAF Thermochemical Tables, 3rd edn., J. Phys. Chem. Ref. Data, suppl. 1 (1985).
2. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992).
3. K. Ono, T. Oomori, M. Tuda, and K. Namba, J. Vac. Sci. Technol. A 10:1071 (1992); C.C. Cheng, K.V. Guinn, V.M. Donnelly, and I.P. Herman, "In Situ Pulsed Laser-Induced Desorption Studies of the Silicon Chloride Layer During Silicon Etching in High Density Plasmas of C12/O2," J. Vac. Sci. Technol. A 12:2630 (1994); M. Hayerlag, G.S. Oehrlein, and D. Vender, "Sidewall Passivation During the Etching of poly-Si in an Electron-Cyclotron-Resonance-Plasma of HBr," J. Vac. Sci. Technol. B 12:96 (1994).
4. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992); J.W. Butterbaugh, D.C. Gray, and H.H. Sawin, J. Vac. Sci. Technol. B 9:1461 (1991); G.S. Oehrlein, Y. Zhang, D. Vender, and O. Joubert, "Fluorocarbon High Density Plasmas II: Silicon Dioxide and Silicon Etching Using CF4 and CHF3," J. Vac. Sci. Technol. A 12:333 (1994); S. Samukawa and K. Terada, J. Vac. Sci. Technol. B 12:3300 (1994); M.J. Goeckner, M.A. Henderson, J.A. Meyer, and R.A. Breun, J. Vac. Sci. Technol. A 12:3120 (1994).
5. S.M. Hart and E.S. Aydil, "Study of Surface Reactions During Plasma Enhanced Chemical Vapor Deposition of SiO2 from SiH4, O2, and Ar Plasma," J. Vac. Sci. Technol. A 14:2062 (1996).
6. E.R. Fisher, P. Ho, W.G. Breiland, and R.J. Buss, J. Phys. Chem . 96:9855 (1992).
7. G.S. Oehrlein, J.F. Rembetski, and E.H. Payne, J. Vac. Sci. Technol. B 8:1199 (1990).
8. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992).
9. K.P. Giapis, T.A. Moore, and T.K. Minton, "Hyperthermal Neutral Beam Etching," J. Vac. Sci. Technol. A 13:959 (1995).
10. S. Tachi, K. Tsujimoto, and S. Okudaira, "Low-Temperature Reactive Ion Etching and Microwave Plasma Etching of Silicon," Appl. Phys. Lett. 52:616 (1988).
11. A. Szabo and T. Engel, J. Vac. Sci. Technol. A 12:648 (1994).
12. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992).
13. A.M. Barklund and H.O. Blom, J. Vac. Sci. Technol. A 11:1226 (1993).
14. B.J. Garrison, "Molecular Dynamics Simulation of Surface Reactions," Chemical Society Reviews 21:155 (1992); H. Feil, J. Dieleman, and B.J. Garrison, J. Appl. Phys. 74:1303 (1993); M.E. Barone and D.B. Graves, J. Appl. Phys. 77:1263 (1995).