Foreign Production of Electronic Components and Army Systems Vulnerabilities (1985)

Chapter: APPENDIX E: FINAL REPORT ON GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR STUDY

Previous Chapter: APPENDIX D: U.S. ACCESS TO FOREIGN TECHNOLOGY
Suggested Citation: "APPENDIX E: FINAL REPORT ON GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR STUDY." National Research Council. 1985. Foreign Production of Electronic Components and Army Systems Vulnerabilities. Washington, DC: The National Academies Press. doi: 10.17226/19263.
Page 90
Suggested Citation: "APPENDIX E: FINAL REPORT ON GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR STUDY." National Research Council. 1985. Foreign Production of Electronic Components and Army Systems Vulnerabilities. Washington, DC: The National Academies Press. doi: 10.17226/19263.
Page 91
Suggested Citation: "APPENDIX E: FINAL REPORT ON GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR STUDY." National Research Council. 1985. Foreign Production of Electronic Components and Army Systems Vulnerabilities. Washington, DC: The National Academies Press. doi: 10.17226/19263.
Page 92
Suggested Citation: "APPENDIX E: FINAL REPORT ON GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR STUDY." National Research Council. 1985. Foreign Production of Electronic Components and Army Systems Vulnerabilities. Washington, DC: The National Academies Press. doi: 10.17226/19263.
Page 93
Next Chapter: GLOSSARY
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