Beam Technologies for Integrated Processing (1992)
Chapter: APPENDIX A: ACRONYMS AND ABBREVIATIONS
APPENDIX A
ACRONYMS AND ABBREVIATIONS
ac
alternating current
AI
artificial intelligence
ARE
activated reactive evaporation
A/V
surface area-to-volume ratio
CBE
chemical beam epitaxy
CBN
cubic boron nitride
CCVD
conventional chemical vapor deposition (also CVD)
CVD
chemical vapor deposition (also CCVD)
CVI
chemical vapor infiltration
cw
continuous wave
dc
direct current
DECR
distributed ECR
DLC
diamond-like carbon
DRAM
dynamic RAM
EB
electron beam (also e-beam)
ECR
electron cyclotron resonance
FET
field effect transistor
FIB
focused ion beam
FMS
flexible machining system
GaAs
gallium arsenide
GSMBE
gas-source MBE
HBT
heterojunction bipolar transistor
HEMT
high electron mobility transistor
HFET
heterojunction FET
IC
integrated circuit
IMPATT
impact avalanche and transit time
IR
infrared
LACVD
laser-assisted CVD
LCVD
laser CVD
LDD
low-doped drain
LPCVD
low-pressure CVD
MBE
molecular beam epitaxy
MMST
Microelectronics Manufacturing Science and Technology
MOCVD
metalorganic CVD
MOMBE
metalorganic MBE
MOS
metal-oxide-semiconductor
Nd-YAG
neodymium-yttrium aluminum garnet
PACVD
plasma-assisted CVD (also PECVD)
PAPVD
plasma-assisted PVD
PECVD
plasma-enhanced CVD (also PACVD)
polydiamond
polycrystalline diamond
PVD
physical vapor deposition
PAPVD
plasma-assisted PVD
RAMs
random access memories
RE
reactive evaporation
rf
radio frequency
RIBE
reactive ion beam etching
RIE
reactive ion etching
SEMI
Semiconductor Equipment and Materials Institute
SIMS
secondary ion mass spectroscopy
TACVD
thermally assisted CVD
TFT
thin film transistor
UFMP
ultrafine metal powders
UHMWPE
ultrahigh molecular weight polyethylene
UV
ultraviolet
via
a conducting through-path perpendicular to the plane of the substrate
VLS
vapor-liquid-solid
