Materials for High-Temperature Semiconductor Devices (1995)

Chapter: Appendix B: Gallium Arsenide as a High Temperature Material

Previous Chapter: Appendix A: Silicon as a High-Temperature Material
Suggested Citation: "Appendix B: Gallium Arsenide as a High Temperature Material." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
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Suggested Citation: "Appendix B: Gallium Arsenide as a High Temperature Material." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 88
Suggested Citation: "Appendix B: Gallium Arsenide as a High Temperature Material." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 89
Suggested Citation: "Appendix B: Gallium Arsenide as a High Temperature Material." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 90
Suggested Citation: "Appendix B: Gallium Arsenide as a High Temperature Material." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 91
Suggested Citation: "Appendix B: Gallium Arsenide as a High Temperature Material." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 92
Next Chapter: Appendix C: High-Temperature Microwave Devices
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