Previous Chapter: Executive Summary
Suggested Citation: "Backgorund." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
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Suggested Citation: "Backgorund." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 8
Suggested Citation: "Backgorund." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 9
Suggested Citation: "Backgorund." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 10
Suggested Citation: "Backgorund." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 11
Suggested Citation: "Backgorund." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 12
Suggested Citation: "Backgorund." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
Page 13
Suggested Citation: "Backgorund." National Research Council. 1995. Materials for High-Temperature Semiconductor Devices. Washington, DC: The National Academies Press. doi: 10.17226/5023.
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Next Chapter: State of the Art of Wide Bandgap Materials
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